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| Datasheet File OCR Text: |
| THX15C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI THX15C is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: * Gold Metalization * Emitter Ballasting MAXIMUM RATINGS IC VCB PDISS TJ TSTG JC 10 A 110 V 233 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 0.75 C/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICES ICEO hFE Cob Pg IMD3 C TC = 25 C TEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 60 V VCE = 30 V VCE = 6.0 V VCB = 50 V VCE = 50 V f = 30 MHz Icq = 100 mA Pout =150 W (PEP) IC = 1.4 A f = 1.0 MHz VBE = 0 V VBE = 0 V MINIMUM TYPICAL MAXIMUM 55 110 110 4.0 5.0 5.0 22.5 27.0 220 14 37 -37 45 -30 UNITS V V V V mA mA --pF dB dBc % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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